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発行日タイトル 著者
Apr-2001 Alignment of Grain Boundary in a Si film Crystallized by a Linearly Polarized Laser Beam on a Glass SubstrateHorita, S; Nakata, Y; Shimoyama, A
16-Mar-2001 Gas adsorption in the inside and outside of single-walled carbon nanotubesFujiwara, Akihiko; Ishii, Kenji; Suematsu, Hiroyoshi; Kataura, Hiromichi; Maniwa, Yutaka; Suzuki, Shinzou; Achiba, Yohji
11-Mar-2001 Non-dispersive and air-stable electron transport in an amorphous organic semiconductorMurata, H.; Malliaras, G. G.; Uchida, M.; Shen, Y.; Kafafi, Z. H.
1-Jan-2001 Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperatureFukushima, S.; Obata, T.; Otsuka, N.
Jan-2001 Syntheses and Enantioselective Recognition of Chiral Poly(phenylacetylene)s bearing Bulky Optically Active Menthyl GroupsShinohara, Ken-ichi; Aoki, Toshiki; Kaneko, Takashi; Oikawa, Eizo
15-Nov-2000 Influence of electronic states on precipitation of metallic As clusters in LT-GaAsOtsuka, N.; Tasaki, Y.; Yamada, T.; Suda, A.; M. R. Melloch
1-Nov-2000 Identification of Si and SiH in catalytic chemical vapor deposition of SiH_4 by laser induced fluorescence spectroscopyNozaki, Yoshitaka; Kongo, Koichi; Miyazaki, Toshihiko; Kitazoe, Makiko; Horii, Katsuhiko; Umemoto, Hironobu; Masuda, Atsushi; Matsumura, Hideki
23-Oct-2000 Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperaturesSato, Hidekazu; Izumi, Akira; Matsumura, Hideki
Oct-2000 Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperatureSano, H; Suda, A; Hatanaka, T; Mizutani, G; Otsuka, N
1-Sep-2000 Structure and Raman scattering of Cs_3C_<60> under high pressureFujiki, S.; Kubozono, Y.; Emura, S.; Takabayashi, Y.; Kashino, S.; Fujiwara, A.; Ishii, K.; Suematsu, H.; Murakami, Y.; Iwasa, Y.; Mitani, T.; Ogata, H.
1-May-2000 Electronic and magnetic properties of La_<0.4>Ba_<0.1>Ca_<0.5>MnO_<3-y> thin filmsHoa Hong, Nguyen; Sakai, Joe; Imai, Syozo
May-2000 Optical second-harmonic generation from the anatase TiO_2(101) faceNakamura, S.; Matsuda, K.; Wakasugi, T.; Kobayashi, E.; Mizutani, G.; Ushioda, S.; Sekiya, T.; Kurita, S.
Feb-2000 Images of cleaved GaAs(110) surfaces observed with a reflection optical second harmonic microscopeSano, H; Shimizu, T; Mizutani, G; Ushioda, S
2000 Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO_2)_<1-x>(Y_2O_3)_x Buffer LayerHorita, Susumu; Aikawa, Mami; Naruse, Tetsuya
11-Oct-1999 Diameter grouping in bulk samples of single-walled carbon nanotubes from optical absorption spectroscopyJost, O.; Gorbunov, A. A.; Pompe, W.; Pichler, T.; Friedlein, R.; Knupfer, M.; Reibold, M.; Bauer, H.-D.; Dunsch, L.; Golden, M. S.; Fink, J.
1-Sep-1999 Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constantYokomichi, Haruo; Masuda, Atsushi
15-Jul-1999 Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor depositionNiikura, Chisato; Masuda, Atsushi; Matsumura, Hideki
1-Jun-1999 Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSnTakabatake, T.; Echizen, Y.; Yoshino, T.; Kobayashi, K.; Nakamoto, G.; Fujii, H.; Sera, M.
24-May-1999 A metal/insulator tunnel transistor with 16 nm channel lengthSasajima, Ryouta; Fujimaru, Kouji; Matsumura, Hideki
1-May-1999 Nanoscale metal transistor control of Fowler-Nordheim tunneling currents through 16 nm insulating channelFujimaru, Kouji; Sasajima, Ryouta; Matsumura, Hideki
12-Apr-1999 Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungstenHeya, Akira; Masuda, Atsushi; Matsumura, Hideki
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