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c10-1. 雑誌掲載論文 >
一覧: 日付
検索結果: 740-760 / 779.
発行日 | タイトル |
著者 |
Apr-2001 | Alignment of Grain Boundary in a Si film Crystallized by a Linearly Polarized Laser Beam on a Glass Substrate | Horita, S; Nakata, Y; Shimoyama, A |
16-Mar-2001 | Gas adsorption in the inside and outside of single-walled carbon nanotubes | Fujiwara, Akihiko; Ishii, Kenji; Suematsu, Hiroyoshi; Kataura, Hiromichi; Maniwa, Yutaka; Suzuki, Shinzou; Achiba, Yohji |
11-Mar-2001 | Non-dispersive and air-stable electron transport in an amorphous organic semiconductor | Murata, H.; Malliaras, G. G.; Uchida, M.; Shen, Y.; Kafafi, Z. H. |
1-Jan-2001 | Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature | Fukushima, S.; Obata, T.; Otsuka, N. |
Jan-2001 | Syntheses and Enantioselective Recognition of Chiral Poly(phenylacetylene)s bearing Bulky Optically Active Menthyl Groups | Shinohara, Ken-ichi; Aoki, Toshiki; Kaneko, Takashi; Oikawa, Eizo |
15-Nov-2000 | Influence of electronic states on precipitation of metallic As clusters in LT-GaAs | Otsuka, N.; Tasaki, Y.; Yamada, T.; Suda, A.; M. R. Melloch |
1-Nov-2000 | Identification of Si and SiH in catalytic chemical vapor deposition of SiH_4 by laser induced fluorescence spectroscopy | Nozaki, Yoshitaka; Kongo, Koichi; Miyazaki, Toshihiko; Kitazoe, Makiko; Horii, Katsuhiko; Umemoto, Hironobu; Masuda, Atsushi; Matsumura, Hideki |
23-Oct-2000 | Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures | Sato, Hidekazu; Izumi, Akira; Matsumura, Hideki |
Oct-2000 | Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature | Sano, H; Suda, A; Hatanaka, T; Mizutani, G; Otsuka, N |
1-Sep-2000 | Structure and Raman scattering of Cs_3C_<60> under high pressure | Fujiki, S.; Kubozono, Y.; Emura, S.; Takabayashi, Y.; Kashino, S.; Fujiwara, A.; Ishii, K.; Suematsu, H.; Murakami, Y.; Iwasa, Y.; Mitani, T.; Ogata, H. |
1-May-2000 | Electronic and magnetic properties of La_<0.4>Ba_<0.1>Ca_<0.5>MnO_<3-y> thin films | Hoa Hong, Nguyen; Sakai, Joe; Imai, Syozo |
May-2000 | Optical second-harmonic generation from the anatase TiO_2(101) face | Nakamura, S.; Matsuda, K.; Wakasugi, T.; Kobayashi, E.; Mizutani, G.; Ushioda, S.; Sekiya, T.; Kurita, S. |
Feb-2000 | Images of cleaved GaAs(110) surfaces observed with a reflection optical second harmonic microscope | Sano, H; Shimizu, T; Mizutani, G; Ushioda, S |
2000 | Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO_2)_<1-x>(Y_2O_3)_x Buffer Layer | Horita, Susumu; Aikawa, Mami; Naruse, Tetsuya |
11-Oct-1999 | Diameter grouping in bulk samples of single-walled carbon nanotubes from optical absorption spectroscopy | Jost, O.; Gorbunov, A. A.; Pompe, W.; Pichler, T.; Friedlein, R.; Knupfer, M.; Reibold, M.; Bauer, H.-D.; Dunsch, L.; Golden, M. S.; Fink, J. |
1-Sep-1999 | Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constant | Yokomichi, Haruo; Masuda, Atsushi |
15-Jul-1999 | Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition | Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki |
1-Jun-1999 | Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn | Takabatake, T.; Echizen, Y.; Yoshino, T.; Kobayashi, K.; Nakamoto, G.; Fujii, H.; Sera, M. |
24-May-1999 | A metal/insulator tunnel transistor with 16 nm channel length | Sasajima, Ryouta; Fujimaru, Kouji; Matsumura, Hideki |
1-May-1999 | Nanoscale metal transistor control of Fowler-Nordheim tunneling currents through 16 nm insulating channel | Fujimaru, Kouji; Sasajima, Ryouta; Matsumura, Hideki |
12-Apr-1999 | Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten | Heya, Akira; Masuda, Atsushi; Matsumura, Hideki |
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