17 著者名表示.
| 発行日 | タイトル |
著者 |
|---|
| 24-Jul-2012 | Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping | Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 2-Oct-2012 | Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates | Suzuki, Toshi-kazu; Hayato Takita; Cong Thanh Nguyen; Iiyama, Koichi |
| 2005 | Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion | Ono, Hideki; Yanagita, Masashi; Taniguchi, Satoshi; Suzuki, Toshi-kazu |
| 5-Jun-2012 | Electron distribution and scattering in InAs films on low-k flexible substrates | Nguyen, Cong Thanh; Shih, Hong-An; Akabori, Masashi; Suzuki, Toshi-kazu |
| 7-Jul-2010 | Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates | Takita, Hayato; Hashimoto, Norihiko; Nguyen, Cong Thanh; Kudo, Masahiro; Akabori, Masashi; Suzuki, Toshi-kazu |
| 25-Jan-2008 | Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates | Jeong, Yonkil; Shindo, Masanori; Akabori, Masashi; Suzuki, Toshi-kazu |
| 14-Nov-2014 | Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices | Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 2004 | High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures | Ono, Hideki; Taniguchi, Satoshi; Suzuki, Toshi-kazu |
| 1-Jul-2006 | Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities | ONO, Hideki; TANIGUCHI, Satoshi; SUZUKI, Toshi-kazu |
| 4-May-2017 | An InAs/high-k/low-k structure: Electron transport and interface analysis | Ui, Toshimasa; Mori, Ryousuke; Le, Son Phuong; Oshima, Yoshifumi; Suzuki, Toshi-kazu |
| 7-Aug-2014 | Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices | Le, Son Phuong; Nguyen, Tuan Quy; Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu |
| 27-May-2016 | Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors | Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy; Shih, Hong-An; Suzuki, Toshi-kazu |
| 9-Nov-2015 | Low-frequency noise in InAs films bonded on low-k flexible substrates | Le, Son Phuong; Ui, Toshimasa; Suzuki, Toshi-kazu |
| 15-Aug-1995 | A statistical model of quantum dot arrays with Coulomb coupling | Suzuki, Toshi-kazu; Nomoto, Kazumasa; Ugajin, Ryuichi; Hase, Ichiro |
| 2010 | Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases | Akabori, Masashi; Trinh, Thanh Quang; Kudo, Masahiro; Hardtdegen, Hilde; Schäpers, Thomas; Suzuki, Toshi-kazu |
| 10-Aug-2018 | Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs | Sato, Taku; Uryu, Kazuya; Okayasu, Junichi; Kimishima, Masayuki; Suzuki, Toshi-kazu |
| 22-Jun-2018 | 狭ギャップ半導体における低次元鏡像電荷効果に基づく中赤外領域励起子制御 | 鈴木, 寿一; Suzuki, Toshi-kazu |
