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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10591

Title: 電圧印加非接触原子間力顕微鏡/分光法による固体表面間の結合形成過程の解析
Other Titles: Analysis of binding formation between solid surfaces by bias voltage non-contact atomic force microscopy/spectroscopy
Authors: 富取, 正彦
Authors(alternative): Tomitori, Masahiko
Keywords: 走査プローブ顕微鏡
表面・界面物性
相互作用力
ナノコンタクト
結合力
コンダクタンス
トンネル障壁
Issue Date: 4-Jun-2012
Abstract: 電圧印加非接触原子間力顕微鏡/分光法(Bias nc-AFM/S)を発展させ、試料表面上の原子・分子と探針先端原子の結合形成、電子状態変化を調べた。一例として、Si(111)7x7 表面にH を吸着させると、H-Si 吸着原子とSi 探針の力は弱く電流も減少し、H-隣接Si レスト原子の場合、Si 吸着原子とSi 探針に働く力は強く電流が増加した。Si-Si 間の結合力は電子のトンネル遷移過程と同様、局所電子状態密度に強く依存する。 : We improved our method of bias nc-AFM/S, and applied this to analysis of binding formation between a surface and a tip, and of electronic states between them. For instance, on H-terminated Si(111)7×7,the force between the Si adatom terminated with H and a Si tip is weaker and the current between them is less. The force between them, where the Si rest atom neighboring the Si adatom is terminated with H,is stronger and the current is larger. This indicates that the force between Si and Si strongly depends on surface local density of states as well as electron tunneling process does.
Description: 研究種目:基盤研究(A)
研究期間:2008~2011
課題番号:20246012
研究者番号:10188790
研究分野:表面科学、ナノプローブテクノロジー
科研費の分科・細目:応用物理学・工学基礎、薄膜・表面界面物性
Language: jpn
URI: http://hdl.handle.net/10119/10591
Appears in Collections:平成23年度 (FY 2011)

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