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Title: | Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions |
Authors: | Akabori, M. Morimoto, K. Wei, W. Iwase, H. Yamada, S. |
Keywords: | InGaAs/InAlAs double-doped heterostructure multiple subband occupation two-dimensional electron gas bilayer spin-orbit coupling |
Issue Date: | 2010-07 |
Publisher: | American Institute of Physics |
Magazine name: | AIP Conference Proceedings |
Volume: | 1399 |
Start page: | 725 |
End page: | 726 |
DOI: | 10.1063/1.3666582 |
Abstract: | We investigated double-doped InGaAs/InAlAs heterostructures with high indium compositions. The heterostructures were grown by molecular beam epitaxy on GaAs(001) with metamorphic step-graded buffer layers. The magneto-transport characterization was performed by using Hall-bar devices. We observed non-monotonic magnetoresistanceoscillations, which indicate a single two-dimensional electron gas (2DEG) with multiple-subband occupationor a 2DEG bilayer. We also observed weak-antilocalization in all samples, which is an evidence of spin-orbit coupling. |
Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Akabori, K. Morimoto, W. Wei, H. Iwase, and S. Yamada, AIP Conference Proceedings, 1399, 725-726 (2010) and may be found at http://link.aip.org/link/doi/10.1063/1.3666582 |
URI: | http://hdl.handle.net/10119/10602 |
Material Type: | publisher |
Appears in Collections: | g11-1. 会議発表論文・発表資料 (Conference Papers)
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