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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/10602

タイトル: Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions
著者: Akabori, M.
Morimoto, K.
Wei, W.
Iwase, H.
Yamada, S.
キーワード: InGaAs/InAlAs
double-doped heterostructure
multiple subband occupation
two-dimensional electron gas bilayer
spin-orbit coupling
発行日: 2010-07
出版者: American Institute of Physics
誌名: AIP Conference Proceedings
巻: 1399
開始ページ: 725
終了ページ: 726
DOI: 10.1063/1.3666582
抄録: We investigated double-doped InGaAs/InAlAs heterostructures with high indium compositions. The heterostructures were grown by molecular beam epitaxy on GaAs(001) with metamorphic step-graded buffer layers. The magneto-transport characterization was performed by using Hall-bar devices. We observed non-monotonic magnetoresistanceoscillations, which indicate a single two-dimensional electron gas (2DEG) with multiple-subband occupationor a 2DEG bilayer. We also observed weak-antilocalization in all samples, which is an evidence of spin-orbit coupling.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Akabori, K. Morimoto, W. Wei, H. Iwase, and S. Yamada, AIP Conference Proceedings, 1399, 725-726 (2010) and may be found at http://link.aip.org/link/doi/10.1063/1.3666582
URI: http://hdl.handle.net/10119/10602
資料タイプ: publisher
出現コレクション:f11-1. 会議発表論文・発表資料 (Conference Papers)


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