JAIST Repository >
Center for Nano Materials and Technology >
Conference Papers >
Conference Papers >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10602

Title: Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions
Authors: Akabori, M.
Morimoto, K.
Wei, W.
Iwase, H.
Yamada, S.
Keywords: InGaAs/InAlAs
double-doped heterostructure
multiple subband occupation
two-dimensional electron gas bilayer
spin-orbit coupling
Issue Date: 2010-07
Publisher: American Institute of Physics
Magazine name: AIP Conference Proceedings
Volume: 1399
Start page: 725
End page: 726
DOI: 10.1063/1.3666582
Abstract: We investigated double-doped InGaAs/InAlAs heterostructures with high indium compositions. The heterostructures were grown by molecular beam epitaxy on GaAs(001) with metamorphic step-graded buffer layers. The magneto-transport characterization was performed by using Hall-bar devices. We observed non-monotonic magnetoresistanceoscillations, which indicate a single two-dimensional electron gas (2DEG) with multiple-subband occupationor a 2DEG bilayer. We also observed weak-antilocalization in all samples, which is an evidence of spin-orbit coupling.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Akabori, K. Morimoto, W. Wei, H. Iwase, and S. Yamada, AIP Conference Proceedings, 1399, 725-726 (2010) and may be found at http://link.aip.org/link/doi/10.1063/1.3666582
URI: http://hdl.handle.net/10119/10602
Material Type: publisher
Appears in Collections:f11-1. 会議発表論文・発表資料 (Conference Papers)

Files in This Item:

File Description SizeFormat
17810.pdf1083KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology