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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10733
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| タイトル: | High-Performance Nonvolatile Write-Once-Read-Many-Times Memory Devices with ZnO Nanoparticles Embedded in Polymethylmethacrylate |
| 著者: | Dao, Toan Thanh
Tran, Thu Viet
Higashimine, Koichi
Okada, Hiromasa
Mott, Derrick
Maenosono, Shinya
Murata, Hideyuki |
| 発行日: | 2011-12-06 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 99 |
| 号: | 23 |
| 開始ページ: | 233303-1 |
| 終了ページ: | 233303-3 |
| DOI: | 10.1063/1.3665937 |
| 抄録: | A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 10^4, retention time of >10^5 s, and number of readout of >4 × 10^4 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths. |
| Rights: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Toan Thanh Dao, Thu Viet Tran, Koichi Higashimine, Hiromasa Okada, Derrick Mott, Shinya Maenosono, and Hideyuki Murata, Applied Physics Letters, 99(23), 233303 (2011) and may be found at http://dx.doi.org/10.1063/1.3665937 |
| URI: | http://hdl.handle.net/10119/10733 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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