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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10733

Title: High-Performance Nonvolatile Write-Once-Read-Many-Times Memory Devices with ZnO Nanoparticles Embedded in Polymethylmethacrylate
Authors: Dao, Toan Thanh
Tran, Thu Viet
Higashimine, Koichi
Okada, Hiromasa
Mott, Derrick
Maenosono, Shinya
Murata, Hideyuki
Issue Date: 2011-12-06
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 99
Number: 23
Start page: 233303-1
End page: 233303-3
DOI: 10.1063/1.3665937
Abstract: A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 10^4, retention time of >10^5 s, and number of readout of >4 × 10^4 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.
Rights: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Toan Thanh Dao, Thu Viet Tran, Koichi Higashimine, Hiromasa Okada, Derrick Mott, Shinya Maenosono, and Hideyuki Murata, Applied Physics Letters, 99(23), 233303 (2011) and may be found at http://dx.doi.org/10.1063/1.3665937
URI: http://hdl.handle.net/10119/10733
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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