JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10740

Title: Thermally oxidized aluminum as catalyst-support layer for vertically aligned single-walled carbon nanotube growth using ethanol
Authors: Azam, Mohd Asyadi
Fujiwara, Akihiko
Shimoda, Tatsuya
Keywords: Verticallyalignedsingle-walled CNT
Aluminum oxide supportlayer
Co catalyst
Ethanol CVD
Al-O surface roughness
Al-O surface chemical state
Issue Date: 2011-09-10
Publisher: Elsevier
Magazine name: Applied Surface Science
Volume: 258
Number: 2
Start page: 873
End page: 882
DOI: 10.1016/j.apsusc.2011.09.018
Abstract: Characteristics and role of Al oxide (Al-O) films used as catalyst-supportlayer for vertical growth of single-walledcarbonnanotubes (SWCNTs) were studied. EB-deposited Al films (20 nm) were thermallyoxidized at 400 °C (10 min, static air) to produce the most appropriate surface structure of Al-O. Al-O catalyst-supportlayers were characterized using various analytical measurements, i.e., atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and spectroscopy ellipsometry (SE). The thermallyoxidized Al-O has a highly roughened surface, and also has the most suitable surface chemical states compared to other type of Al-O supportlayers. We suggest that the surface of thermallyoxidized Al-O characterized in this work enhanced Co catalyst activity to promote the verticallyaligned SWCNT growth.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Mohd Asyadi Azam, Akihiko Fujiwara, Tatsuya Shimoda, Applied Surface Science, 258(2), 2011, 873-882, http://dx.doi.org/10.1016/j.apsusc.2011.09.018
URI: http://hdl.handle.net/10119/10740
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
17491.pdf968KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology