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https://hdl.handle.net/10119/10741
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| Title: | Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process |
| Authors: | Miyasako, Takaaki
Trinh, Bui Nguyen Quoc
Onoue, Masatoshi
Kaneda, Toshihiko
Tue, Phan Trong
Tokumitsu, Eisuke
Shimoda, Tatsuya |
| Keywords: | solution process
chemical solution deposition
ferroelectric-gate
thin-film transistor
FeRAM
nonvolatile memory
Pb(Zr, Ti)O_3
LaNiO_3
ITO
oxide semiconduc-tor |
| Issue Date: | 2011-04-20 |
| Publisher: | The Japan Society of Applied Physics |
| Magazine name: | Japanese Journal of Applied Physics |
| Volume: | 50 |
| Start page: | 04DD09-1 |
| End page: | 04DD09-6 |
| DOI: | 10.1143/JJAP.50.04DD09 |
| Abstract: | We have fabricated inorganic ferroelectric-gate thin film transistors (FGTs) using only a chemical solution deposition (CSD) process. All layers, including the LaNiO_3 (LNO) gate electrode, Pb(Zr,Ti)O_3 (PZT) ferroelectric-gate insulator, indium-tin-oxide (ITO) source/drain electrodes , and ITO channel, were formed on a SrTiO_3 (STO) substrate by the CSD process. We obtained an local epitaxially grown PZT/LNO perovskite hetero-structure with good crystalline quality and no interfacial layer. The fabricated FGT exhibited typical n-channel transistor operation, with a counterclockwise hysteresis loop due to the ferroelectric nature of the PZT-gate insulator, and also exhibited good drain current saturation in output characteristics. These properties are equivalent to or better than those obtained with FGTs fabricated by means of conventional vacuum processes. The obtained on/off current ratio, memory window, and subthreshold voltage swing were about 10^5, 2.5 V, and 357 mV/decade, respectively. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2011 The Japan Society of Applied Physics. Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda, Japanese Journal of Applied Physics, 50, 2011, 04DD09-1-04DD09-6. http://jjap.jsap.jp/link?JJAP/50/04DD09/ |
| URI: | https://hdl.handle.net/10119/10741 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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