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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10871

Title: Organic nonvolatile memory transistors based on fullerene and an electron-trapping polymer
Authors: Dao, Toan Thanh
Matsushima, Toshinori
Murata, Hideyuki
Keywords: Fullerene transistor
Nonvolatile memory transistor
Floating-gate effect
Electron-trapping polymer
Issue Date: 2012-08-13
Publisher: Elsevier
Magazine name: Organic Electronics
Volume: 13
Number: 11
Start page: 2709
End page: 2715
DOI: 10.1016/j.orgel.2012.07.041
Abstract: We report for the first time organic n-type nonvolatile memory transistors based on a fullerene (C_<60>) semiconductor and an electron-trapping polymer, poly(perfluoroalkenyl vinyl ether) (CYTOP). The transistors with a Si++/SiO_2/CYTOP/C_<60>/Al structure show good n-type transistor performance with a threshold voltage (V_<th>) of 2.8 V and an electron mobility of 0.4 cm^2 V^<−1> s^<−1>. Applying gate voltages of 50 or −45 V for about 0.1 s to the devices induces the reversible shifts in their transfer characteristics, which results in a large memory window (ΔV_<th>) of 10 V. A memory on/off ratio of 10^5 at a small reading voltage below 5 V and a retention time greater than 10^5 s are achieved. The memory effect in the transistor is ascribed to electrons trapped at the CYTOP/SiO_2 interface. Because of the use of high-electron-mobility C_<60>, the switching voltages of our memory transistors become significantly lower than those of conventional memory transistors based on pentacene.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Toan Thanh Dao, Toshinori Matsushima, and Hideyuki Murata, Organic Electronics, 13(11), 2012, 2709-2715, http://dx.doi.org/10.1016/j.orgel.2012.07.041
URI: http://hdl.handle.net/10119/10871
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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