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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/11459
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| タイトル: | Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film |
| 著者: | Masuda, Takashi
Matsuki, Yasuo
Shimoda, Tatsuya |
| キーワード: | CPS
Cyclopentasilane
Polydihydrosilane
Polysilane
Amorphous silicon
Solution process |
| 発行日: | 2012-07-16 |
| 出版者: | Elsevier |
| 誌名: | Thin Solid Films |
| 巻: | 520 |
| 号: | 21 |
| 開始ページ: | 6603 |
| 終了ページ: | 6607 |
| DOI: | 10.1016/j.tsf.2012.07.028 |
| 抄録: | The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Sisingle bondSi bonds are concluded for the pyrolysis temperature T_p = 270 to 360 °C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T_p ≥ 330 °C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T_p ≥ 360 °C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Takashi Masuda, Yasuo Matsuki, Tatsuya Shimoda, Thin Solid Films, 520(21), 2012, 6603-6607, http://dx.doi.org/10.1016/j.tsf.2012.07.028 |
| URI: | http://hdl.handle.net/10119/11459 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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