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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/11459

Title: Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film
Authors: Masuda, Takashi
Matsuki, Yasuo
Shimoda, Tatsuya
Keywords: CPS
Amorphous silicon
Solution process
Issue Date: 2012-07-16
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 520
Number: 21
Start page: 6603
End page: 6607
DOI: 10.1016/j.tsf.2012.07.028
Abstract: The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Sisingle bondSi bonds are concluded for the pyrolysis temperature T_p = 270 to 360 °C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T_p ≥ 330 °C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T_p ≥ 360 °C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Takashi Masuda, Yasuo Matsuki, Tatsuya Shimoda, Thin Solid Films, 520(21), 2012, 6603-6607, http://dx.doi.org/10.1016/j.tsf.2012.07.028
URI: http://hdl.handle.net/10119/11459
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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