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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/11939

Title: Effect of the crystallization-induction layer of yttria-stabilized zirconia on the solid state crystallization of an amorphous Si film
Authors: Horita, Susumu
Akahori, Tetsuya
Issue Date: 2014-01-31
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 53
Number: 3
Start page: 030303-1
End page: 030303-4
DOI: 10.7567/JJAP.53.030303
Abstract: We investigated the crystallization-induction (CI) effect of yttria-stabilized zirconia (YSZ) on the solid phase crystallization of amorphous Si (a-Si) films. The incubation time τ_i for crystallization on a polycrystalline YSZ layer was shorter than that on a glass substrate. From the result of Arrhenius plots of 1/τ_i, it is suggested that the CI effect is not due to the difference in the activation energy E_i but to a higher nucleation site area density on the YSZ layer. Also, preheating the YSZ layer prior to a-Si film deposition was effective to shorten the incubation time τ_i because E_i was reduced.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2014 The Japan Society of Applied Physics. Susumu Horita and Tetsuya Akahori, Japanese Journal of Applied Physics, 53(3), 2014, 030303-1-030303-4. http://dx.doi.org/10.7567/JJAP.53.030303
URI: http://hdl.handle.net/10119/11939
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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