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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12612

Title: Improving crystalline quality of polycrystalline silicon thin films crystallized on yttria-stabilized zirconia crystallization-induction layers by the two-step irradiation method of pulsed laser annealing
Authors: Mai, Thi Kieu Lien
Horita, Susumu
Issue Date: 2015-02-18
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 54
Number: 3S
Start page: 03CA01-1
End page: 03CA01-8
DOI: 10.7567/JJAP.54.03CA01
Abstract: Crystalline quality of pulse-laser annealed micocrystalline silicon (poly-Si) films on yttria-stabilized zirconia [(ZrO_2)_<1-x>(Y_2O_3)_x: YSZ] crystallization-induction (CI) layers is further improved by a new two-step irradiation method, in which amorphous silicon (a-Si) films are irradiated using two kinds of energy density. Firstly, they were irradiated at a low energy density for a short time to generate nuclei, following by irradiation at a high energy density to complete crystallization. Crystalline fraction and grain size of the Si film crystallized by the two-step method were found to be larger while its FWHM was smaller than those by the conventional one. Moreover, grain size of the Si/YSZ/glass was more uniform than that of the Si/glass. This indicates not only effectiveness of the YSZ CI layer but also usefulness of the two-step method on improving Si film quality.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2015 The Japan Society of Applied Physics. Mai Thi Kieu Lien and Susumu Horita, Japanese Journal of Applied Physics, 54(3S), 2015, 03CA01-1-03CA01-8. http://dx.doi.org/10.7567/JJAP.54.03CA01
URI: http://hdl.handle.net/10119/12612
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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