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Master of Science（Materials Science） >
H26) (Jun.2014 - Mar.2015 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/12730
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| Title: | AlTiO/InAlN/AlN/GaN金属-絶縁体-半導体電界効果トランジスタにおけるゲートリーク電流の伝導機構 |
| Authors: | 梁, 吉慶 |
| Authors(alternative): | りょう, きっけい |
| Keywords: | AlTiO
GaN
InAlN |
| Issue Date: | Mar-2015 |
| Description: | Supervisor:鈴木寿一
マテリアルサイエンス研究科
修士 |
| Title(English): | Fabrication and characterization of AlTiO/InAlN/AlN/GaN field-effect transistor |
| Authors(English): | LIANG, Jiqing |
| Language: | |
| URI: | http://hdl.handle.net/10119/12730 |
| Appears in Collections: | M-MS. 2014年度(H26) (Jun.2014 - Mar.2015)
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