JAIST Repository >
Theses >
Doctor of Philosophy(Materials Science) >
H26) (Jun.2014 - Mar.2015 >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12772

Title: n型結晶シリコン用高品質Cat-CVD窒化シリコンパッシベーション層の開発とその裏面コンタクト結晶シリコン太陽電池への応用
Authors: Trinh, Thi Cham
Authors(alternative): とりん, てぃ ちゃむ
Keywords: Catalytic chemical vapor deposition (Cat-CVD)
Phosphorus Cat-doping
surface recombination velocity
silicon nitride (SiNx)
passivation quality
Issue Date: Mar-2015
Description: Supervisor:大平 圭介
Title(English): Development of high-quality Cat-CVD SiNx passivation layer for n-type c-Si and its application to back-contact c-Si solar cells
Authors(English): Trinh, Thi Cham
Language: eng
URI: http://hdl.handle.net/10119/12772
Academic Degrees and number: 甲第866号
Degree-granting date: 2015-03-20
Degree name: 博士(マテリアルサイエンス)
Degree-granting institutions: 北陸先端科学技術大学院大学
Appears in Collections:D-MS. 2014年度(H26) (Jun.2014 - Mar.2015)

Files in This Item:

File Description SizeFormat
abstract.pdf英文要旨11KbAdobe PDFView/Open
paper.pdf本文11070KbAdobe PDFView/Open
summary.pdf内容の要旨及び論文審査の結果の要旨239KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology