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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12832

Title: 領域選択形成したInAsナノワイヤ/強磁性体複合構造によるスピンデバイス
Other Titles: Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growth
Authors: 赤堀, 誠志
Authors(alternative): Akabori, Masashi
Keywords: 選択成長
MBE
InAs
ナノワイヤ
FET
スピン
MnAs
Issue Date: 3-Jun-2015
Abstract: 領域選択形成InAsナノワイヤのスピンデバイス応用を目指して、(112)B基板上での成長、ウェットエッチングによる50 nm径InAsナノワイヤの形成、ナノワイヤトランジスタの作製・評価を行った。また、強磁性体電極作製技術・スピン物性評価技術として、CoFe-InGaAs系非局所スピンバルブデバイスの作製・評価、MnAs/InAs/GaAs(111)B成長と伝送線路モデルデバイスの作製・評価を行い、スピンデバイス応用に向けて有望な知見を得た。 : For the application of selective-area-grown InAs nanowires to spin devices, we carried out growth on (112)B substrates, formation of 50-nm-thick InAs nanowires by wet etching, and fabrication and characterization of nanowire transistors. Also as the technologies of ferromagnetic electrode formation and spin characterization, we carried out fabrication and characterization of CoFe-InGaAs non-local spin-valve devices, growth of MnAs/InAs/GaAs(111)B, and fabrication and characterization of transmission-line-model devices. As a result, we successfully obtained knowledge for spin device application.
Description: 研究種目:基盤研究(C)
研究期間:2012~2014
課題番号:24560368
研究者番号:50345667
研究分野:ナノ構造プロセス・物性評価
Language: jpn
URI: http://hdl.handle.net/10119/12832
Appears in Collections:平成26年度 (FY 2014)

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