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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12912

Title: Enhancement of ultraviolet light responsivity of a pentacene phototransistor by introducing photoactive molecules into a gate dielectric
Authors: Dao, Toan Thanh
Matsushima, Toshinori
Murakami, Motonobu
Ohkubo, Kei
Fukuzumi, Shunichi
Murata, Hideyuki
Issue Date: 2014-01-29
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 53
Number: 2s
Start page: 02BB03-1
End page: 02BB03-5
DOI: 10.7567/JJAP.53.02BB03
Abstract: We demonstrated a new approach to fabricate an ultraviolet (UV) photodetector with a pentacene transistor structure where photoactive molecules of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) were introduced into a poly(methyl methacrylate) (PMMA) gate dielectric. DPA-CM molecules strongly absorb UV light and form stable charge-separation states. When a negative gate voltage was scanned to a gate electrode of the transistor, the charge-separation states of DPA-CM molecules were converted into free electrons and holes. The free electrons traversed and subsequently reached an interface of the PMMA:DPA-CM layer and a polystyrene buffer layer, inducing accumulation of additional holes in a pentacene channel. Therefore, under 2.54 mW/cm^2 of 365 nm UV irradiation, a marked increase in drain current by 6.1 × 10^2 times were obtained from the transistor. Moreover, the phototransistor exhibited a high light responsivity of 0.12 A/W which is about one order of magnitude larger than that of a conventional pentacene phototransistor [Lucas et al., Thin Solid Films 517 (2009) 280]. This result will be useful for manufacturing of a high-performance UV photodetector.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2014 The Japan Society of Applied Physics. Toan Thanh Dao, Toshinori Matsushima, Motonobu Murakami, Kei Ohkubo, Shunichi Fukuzumi, and Hideyuki Murata, Japanese Journal of Applied Physics, 53(2s), 2014, 02BB03-1-02BB03-5. http://dx.doi.org/10.7567/JJAP.53.02BB03
URI: http://hdl.handle.net/10119/12912
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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