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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/15289
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タイトル: | Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors |
著者: | Trong Tue, Phan Inoue, Satoshi Takamura, Yuzuru Shimoda, Tatsuya |
キーワード: | oxide thin film transistor solution process low temperature indium tin oxide (ITO) |
発行日: | 2016-06-01 |
出版者: | Springer |
誌名: | Applied Physics A |
巻: | 122 |
号: | 6 |
開始ページ: | Article:623 |
DOI: | 10.1007/s00339-016-0156-y |
抄録: | We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide (ZIZO) TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes of tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10^<−4> Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained “on/off” current ratio, sub-threshold swing factor, sub-threshold voltage, and field-effect mobility were 5×10^7, 0.43 V/decade, 0.7 V, and 2.1 cm^2V^<-1>s^<-1>, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. |
Rights: | This is the author-created version of Springer, Phan Trong Tue, Satoshi Inoue, Yuzuru Takamura, and Tatsuya Shimoda, Applied Physics A, 122(6), 2016, Article:623. The original publication is available at www.springerlink.com, http://dx.doi.org/10.1007/s00339-016-0156-y |
URI: | http://hdl.handle.net/10119/15289 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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