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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15291

Title: Dual-gate low-voltage organic transistor for pressure sensing
Authors: Tsuji, Yushi
Sakai ,Heisuke
Feng, Linrun
Guo, Xiaojun
Murata, Hideyuki
Keywords: pressure sensor
organic transistor
low voltage
Issue Date: 2017-01-23
Publisher: IOP Publishing
Magazine name: Applied Physics Express
Volume: 10
Number: 2
Start page: 21601-1
End page: 21601-4
DOI: 10.7567/APEX.10.021601
Abstract: We simultaneously achieved low voltage operation (-5 V) and large drain current (I_D) modulation in a dual-gate organic pressure sensor in which a piezoelectric layer was stacked on a low voltage organic field-effect transistor (OFET). During testing, the I_D changed from 3.9×10^<-9> A to 2.5×10^<-11> A when a 300 kPa pressure load was applied, and the I_D clearly responded to the pressure load and release. An endurance cycle test of the device was performed using a pressure load of 100 kPa, and the I_D modulation was consistently reproduced throughout the test.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Yushi Tsuji, Heisuke Sakai, Linrun Feng, Xiaojun Guo and Hideyuki Murata, Applied Physics Express, 10(2), 2017, 21601. http://dx.doi.org/10.7567/APEX.10.021601
URI: http://hdl.handle.net/10119/15291
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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