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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15344

Title: Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone
Authors: Horita, Susumu
Jain, Puneet
Keywords: silicon oxide film
low temperature deposition
Issue Date: 2017-07-03
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 56
Number: 8
Start page: 088003-1
End page: 088003-3
DOI: 10.7567/JJAP.56.088003
Abstract: A low-temperature silcon oxide film was deposited at 160 to 220 °C using an atmospheric pressure CVD system with silicone oil vapor and ozone gases. It was found that the deposition rate is markedly increased by adding trichloroethylene (TCE) vapor, which is generated by bubbling TCE solution with N_2 gas flow. The increase is more than 3 times that observed without TCE, and any contamination due to TCE is hardly observed in the deposited Si oxide films from Fourier transform infrared spectra.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Susumu Horita and Puneet Jain, Japanese Journal of Applied Physics, 56(8), 2017, 088003-1-088003-3. http://dx.doi.org/10.7567/JJAP.56.088003
URI: http://hdl.handle.net/10119/15344
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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