|
JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/15344
|
| Title: | Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone |
| Authors: | Horita, Susumu
Jain, Puneet |
| Keywords: | silicon oxide film
low temperature deposition
APCVD
ozone |
| Issue Date: | 2017-07-03 |
| Publisher: | IOP Publishing |
| Magazine name: | Japanese Journal of Applied Physics |
| Volume: | 56 |
| Number: | 8 |
| Start page: | 088003-1 |
| End page: | 088003-3 |
| DOI: | 10.7567/JJAP.56.088003 |
| Abstract: | A low-temperature silcon oxide film was deposited at 160 to 220 °C using an atmospheric pressure CVD system with silicone oil vapor and ozone gases. It was found that the deposition rate is markedly increased by adding trichloroethylene (TCE) vapor, which is generated by bubbling TCE solution with N_2 gas flow. The increase is more than 3 times that observed without TCE, and any contamination due to TCE is hardly observed in the deposited Si oxide films from Fourier transform infrared spectra. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2017 The Japan Society of Applied Physics. Susumu Horita and Puneet Jain, Japanese Journal of Applied Physics, 56(8), 2017, 088003-1-088003-3. http://dx.doi.org/10.7567/JJAP.56.088003 |
| URI: | http://hdl.handle.net/10119/15344 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| 23433.pdf | | 419Kb | Adobe PDF | View/Open |
|
All items in DSpace are protected by copyright, with all rights reserved.
|
