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http://hdl.handle.net/10119/15365
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| Title: | Interaction study of nitrogen ion beam with silicon |
| Authors: | Schmidt, Marek E.
Zhang, Xiaobin
Oshima, Yoshifumi
Anh, Le The
Yasaka, Anto
Kanzaki, Teruhisa
Muruganathan, Manoharan
Akabori, Masashi
Shimoda, Tatsuya
Mizuta, Hiroshi |
| Keywords: | Nitrogen ion beam
single crystalline silicon
subsurface damage
scanning transmission electron microscopy
Monte Carlo simulation |
| Issue Date: | 2017-02-24 |
| Publisher: | American Vacuum Society |
| Magazine name: | Journal of Vacuum Science & Technology B |
| Volume: | 35 |
| Number: | 3 |
| Start page: | 03D101 |
| DOI: | 10.1116/1.4977566 |
| Abstract: | Focused ion beam technology with light gas ions has recently gained attention with the commercial helium and neon ion beam systems. These ions are atomic, and thus, the beam/sample interaction is well understood. In the case of the nitrogen ion beam, several questions remain due to the molecular nature of the source gas, and in particular, if and when the molecular bond is split. Here, the authors report a cross-sectional scanning transmission electron microscopy (STEM) study of irradiated single crystalline silicon by various doses and energies of nitrogen ionized in a gas field ion source. The shape and dimensions of the subsurface damage is compared to Monte Carlo simulations and show very good agreement with atomic nitrogen with half the initial energy. Thus, it is shown that the nitrogen molecule is ionized as such and splits upon impact and proceeds as two independent atoms with half of the total beam energy. This observation is substantiated by molecular dynamics calculations. High resolution STEM images show that the interface between amorphous and crystalline silicon is well defined to few tens of nanometers. |
| Rights: | Copyright 2017 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Marek E. Schmidt, Xiaobin Zhang, Yoshifumi Oshima, Le The Anh, Anto Yasaka, Teruhisa Kanzaki, Manoharan Muruganathan, Masashi Akabori, Tatsuya Shimoda, Hiroshi Mizuta, Journal of Vacuum Science & Technology B, 35(3), 03D101- (2017) and may be found at http://dx.doi.org/10.1116/1.4977566 |
| URI: | http://hdl.handle.net/10119/15365 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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