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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15410

Title: 狭ギャップ半導体における低次元鏡像電荷効果に基づく中赤外領域励起子制御
Other Titles: Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductors
Authors: 鈴木, 寿一
Authors(alternative): Suzuki, Toshi-kazu
Keywords: 狭ギャップ半導体
Issue Date: 22-Jun-2018
Abstract: 低誘電率ホスト材料上InAs薄膜構造(InAs/low-k構造)を作製し、この系の電流低周波ノイズの挙動を調べた結果、InAs薄膜内電子のクーロン相互作用の特徴的長さが20 nm程度であることがわかった。また、InAs/low-k構造におけるInAsとlow-k材料の間に高誘電率酸化物を挿入したInAs/high-k/low-k構造の作製に成功し、この系においては、界面の幾何学的不均一性による電子の散乱は抑制されるものの、界面近傍の意図せぬ固定電荷によるクーロン散乱の影響が大きいことが示された。:We fabricated and investigated InAs/low-k structures, where high-quality InAs thin films are bonded on host low-dielectric-constant (low-k) flexible substrates. From low-frequency noise measurements of the InAs/low-k, we found that the relevant length of Coulomb interaction is ~ 20 nm for electrons in the InAs. We also fabricated and investigated InAs/high-k/low-k structures, where high-k insulator layers are inserted between the InAs and the low-k. As a result, it is found that the InAs/high-k/low-k can suppress interface fluctuation scattering of electrons, whereas Coulomb scattering is enhanced by unintentional interface fixed charges.
Description: 挑戦的萌芽研究
Language: jpn
URI: http://hdl.handle.net/10119/15410
Appears in Collections:平成29年度 (FY 2017)

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