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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/15422

タイトル: Low-frequency noise in InAs films bonded on low-k flexible substrates
著者: Le, Son Phuong
Ui, Toshimasa
Suzuki, Toshi-kazu
発行日: 2015-11-09
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 107
号: 19
開始ページ: 192103-1
終了ページ: 192103-4
DOI: 10.1063/1.4935458
抄録: We have systematically investigated low-frequency noise (LFN) in InAs films with several thicknesses (≃10‐100 nm) bonded on low-k flexible substrates (InAs/FS), comparing with that in InAs films epitaxially grown on GaAs(001) substrates (InAs/GaAs). We obtain current LFN spectra exhibiting approximate 1/f characteristics and consequent effective Hooge parameters α depending on the thickness, where we find that α in the InAs/FS is larger than that in the InAs/GaAs. The behavior of α can be attributed to the fluctuation of the electron mobility dominated by surface/interface charge scattering and by thickness fluctuation scattering.
Rights: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Son Phuong Le, Toshimasa Ui, and Toshi-kazu Suzuki, Applied Physics Letters, 107(19), 192103 (2015) and may be found at http://dx.doi.org/10.1063/1.4935458
URI: http://hdl.handle.net/10119/15422
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)


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