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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15733

Title: An InAs/high-k/low-k structure: Electron transport and interface analysis
Authors: Ui, Toshimasa
Mori, Ryousuke
Le, Son Phuong
Oshima, Yoshifumi
Suzuki, Toshi-kazu
Keywords: InAs
electron transport
interface analysis
Issue Date: 2017-05-04
Publisher: American Institute of Physics
Magazine name: AIP Advances
Volume: 7
Number: 5
Start page: 055303-1
End page: 055303-8
DOI: 10.1063/1.4983176
Abstract: We fabricated and investigated an InAs/high-k/low-k structure in comparison with an InAs/low-k structure, where the former and the latter are respectively obtained by bonding of InAs/Al_2O_3/AlN and InAs on low-k flexible substrates (FS). The InAs/high-k/low-k (InAs/A_l2O_3/AlN/FS) exhibits electron mobilities immune to interface fluctuation scattering, whereas this scattering is serious for the InAs/low-k (InAs/FS). Moreover, we find that electron sheet concentrations in the InAs/high-k/low-k are significantly higher than those in the InAs/low-k. From InAs/Al_2O_3 interface analysis by energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy, we find that the higher electron concentrations can be attributed to natural modulation doping from A_l2O_3 to InAs.
Rights: Toshimasa Ui, Ryousuke Mori, Son Phuong Le, Yoshifumi Oshima, and Toshi-kazu Suzuki, AIP Advances, 7(5), 2017, 055303-1-055303-8. © 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). [http://dx.doi.org/10.1063/1.4983176]
URI: http://hdl.handle.net/10119/15733
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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