JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15734

Title: Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas
Authors: Horita, Susumu
Jain, Puneet
Keywords: silicon oxide film
silicone oil
CVD
low temperature
Issue Date: 2018-01-23
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 57
Number: 3S1
Start page: 03DA02-1
End page: 03DA02-7
DOI: 10.7567/JJAP.57.03DA02
Abstract: We investigated the dependences of the deposition rate and residual OH content of SiO_2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160-260 °C with the reactant gases of silicone oil (SO) and O_3. The deposition rate depends on the TCE concentration and is minimum at a concentration of ~0.4 mol/m^3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O_3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO_2 film deposited at 200 °C because TCE enhances the dehydration reaction.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2018 The Japan Society of Applied Physics. Susumu Horita and Puneet Jain, Japanese Journal of Applied Physics, 57(3S1), 2018, 03DA02-1-03DA02-7. http://dx.doi.org/10.7567/JJAP.57.03DA02
URI: http://hdl.handle.net/10119/15734
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
24462.pdf585KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology