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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/15735

Title: Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Authors: Le, Son Phuong
Ui, Toshimasa
Nguyen, Tuan Quy
Shih, Hong-An
Suzuki, Toshi-kazu
Keywords: AlGaN/GaN
metal-insulator-semiconductor (MIS) device
AlTiO
low-frequency noise
Poole-Frenkel current
Issue Date: 2016-05-27
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 119
Number: 20
Start page: 204503-1
End page: 204503-6
DOI: 10.1063/1.4952386
Abstract: Using aluminum titanium oxide (AlTiO, an alloy of Al_2O_3 and TiO_2) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants,∼25 ms and ∼3 ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5-0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents are analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN.
Rights: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih, and Toshi-kazu Suzuki, Journal of Applied Physics, 119(20), 204503 (2016) and may be found at http://dx.doi.org/10.1063/1.4952386
URI: http://hdl.handle.net/10119/15735
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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