|
JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16104
|
| タイトル: | Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs |
| 著者: | Sato, Taku
Uryu, Kazuya
Okayasu, Junichi
Kimishima, Masayuki
Suzuki, Toshi-kazu |
| キーワード: | AlGaN-GaN
MOSFET
normally-off
drain-induced barrier lowering (DIBL) |
| 発行日: | 2018-08-10 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 113 |
| 号: | 6 |
| 開始ページ: | 063505-1 |
| 終了ページ: | 063505-4 |
| DOI: | 10.1063/1.5039886 |
| 抄録: | We investigated drain-induced barrier lowering (DIBL) in normally-off AlGaN-GaN metaloxide-semiconductor field-effect transistors (MOSFETs) with a double-recess overlapped gate structure. It is found that the double-recess overlapped gate structure can suppress DIBL; the threshold voltage is constant without lowering for high drain-source voltages, and sub-threshold characteristics remains excellent. We elucidate the mechanism of the DIBL suppression by considering a local potential in the MOSFETs. In addition, it is also found that the double-recess overlapped gate structure is beneficial for current collapse suppression. |
| Rights: | Copyright 2018 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Taku Sato, Kazuya Uryu, Junichi Okayasu, Masayuki Kimishima, and Toshi-kazu Suzuki, Applied Physics Letters, 113(6), 063505 (2018) and may be found at http://dx.doi.org/10.1063/1.5039886 |
| URI: | http://hdl.handle.net/10119/16104 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 24309.pdf | | 827Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
