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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/18795

Title: Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH)
Authors: Horita, Susumu
Pu, Di
Issue Date: 2023-12-20
Publisher: IOP Publishing on behalf of the Japan Society of Applied Physics (JSAP)
Magazine name: Japanese Journal of Applied Physics
Volume: 63
Number: 01SP12
Start page: 1
End page: 9
DOI: 10.35848/1347-4065/acf477
Abstract: We investigated the post-deposition heating (PDH) effect on OH content in SiOx films deposited by atmospheric-pressure CVD using a deposition source of silicone oil (SO) with O3 and TCE vapor at a temperature Td of 180 °C–250 °C. The PDH is performed in situ for 5 min in the deposition chamber just after film deposition without any supply of SO, where the heating temperature is the same as Td. The OH content in the films deposited normally decreases with increasing Td. In contrast, those with PDH decrease with deceasing Td from 220 °C, and, at Td = 190 °C, a minimum OH content can be obtained. This means that lower OH content remains at a lower deposition temperature. The PDH effect on OH reduction can be explained by easily reconstructible structure of SiOx films deposited at low temperature. Furthermore, we discuss the mechanism of the PDH effect from other points of view.
Rights: Copyright (c) 2023 Authors. Susumu Horita, Di Pu. Japanese Journal of Applied Physics 63, 01SP12 (2024). This is an Open Access article distributed under the terms of Creative Commons Licence CC-BY [https://creativecommons.org/licenses/by/4.0/]. Original publication is available on IOP Science via https://doi.org/10.35848/1347-4065/acf477.
URI: http://hdl.handle.net/10119/18795
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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