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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/19335

Title: 金属-半導体界面層あるいは絶縁体-半導体界面層を用いたAlGaN/GaNデバイスの閾値電圧制御
Authors: DENG, YUCHEN
Authors(alternative): でん, ゆうじん
Keywords: AlGaN/GaN device
interfacial layer
threshold voltage control
vacuum level step
fixed charge
Issue Date: Jun-2024
Description: Supervisor: 鈴木 寿一
先端科学技術研究科
博士
Title(English): Threshold voltage modulation in AlGaN/GaN devices using metal-semiconductor or insulator-semiconductor interfacial layers
Authors(English): DENG, YUCHEN
Language: eng
URI: http://hdl.handle.net/10119/19335
Academic Degrees and number: 甲第1478号
Degree-granting date: 2024-06-24
Degree name: 博士(マテリアルサイエンス)
Degree-granting institutions: 北陸先端科学技術大学院大学
Appears in Collections:D-MS. 2024年度(R06) (Jun.2024 - Mar.2025)

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