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Doctor of Philosophy（Materials Science） >
R06) (Jun.2024 - Mar.2025 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/19335
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| Title: | 金属-半導体界面層あるいは絶縁体-半導体界面層を用いたAlGaN/GaNデバイスの閾値電圧制御 |
| Authors: | DENG, YUCHEN |
| Authors(alternative): | でん, ゆうじん |
| Keywords: | AlGaN/GaN device
interfacial layer
threshold voltage control
vacuum level step
fixed charge |
| Issue Date: | Jun-2024 |
| Description: | Supervisor: 鈴木 寿一
先端科学技術研究科
博士 |
| Title(English): | Threshold voltage modulation in AlGaN/GaN devices using metal-semiconductor or insulator-semiconductor interfacial layers |
| Authors(English): | DENG, YUCHEN |
| Language: | eng |
| URI: | http://hdl.handle.net/10119/19335 |
| Academic Degrees and number: | 甲第1478号 |
| Degree-granting date: | 2024-06-24 |
| Degree name: | 博士(マテリアルサイエンス) |
| Degree-granting institutions: | 北陸先端科学技術大学院大学 |
| Appears in Collections: | D-MS. 2024年度(R06) (Jun.2024 - Mar.2025)
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Files in This Item:
| File |
Description |
Size | Format |
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| abstract.pdf | 要旨 | 12Kb | Adobe PDF | View/Open | | paper.pdf | 本文 | 19221Kb | Adobe PDF | View/Open | | summary.pdf | 内容の要旨及び論文審査の結果の要旨 | 221Kb | Adobe PDF | View/Open |
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