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H17) (Jun.2005 - Mar.2006 >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/2195

Title: GaAsデルタドープ対構造における局在電子状態の研究
Authors: 井筒, 康洋
Authors(alternative): いづつ, やすひろ
Keywords: MBE, 金属絶縁体転移, 局在スピン
MBE, metal-insulator transition, localized spin
Issue Date: Mar-2006
Supervisor:大塚 信雄
Title(English): Study of localized electron states in pair delta doped GaAs structures
Authors(English): Idutsu, Yasuhiro 
Language: eng
URI: http://hdl.handle.net/10119/2195
Appears in Collections:D-MS. 2005年度(H17) (Jun.2005 - Mar.2006)

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