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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/2580

Title: S終端したGaAs上へのGeエピタキシャル成長
Authors: 藤島, 達也
Authors(alternative): ふじしま, たつや
Keywords: 酸化膜除去, 硫黄終端, Geエピタキシャル成長, pn反転
prevented oxidation,S-passivated,Ge epitaxial grow
Issue Date: Mar-1999
Description: 
山田省二
材料科学研究科
修士
Title(English): Ge epitaxial growth on S-passivated GaAs by MBE
Authors(English): Fujishima, Tathuya
Language: jpn
URI: http://hdl.handle.net/10119/2580
Appears in Collections:M-MS. 平成10年度 (Jun.1998 - Mar.1999)

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