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Master of Science（Materials Science） >
H10) (Jun.1998 - Mar.1999 >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/2653
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| Title: | 狭バンドギャップHEMTを用いた電界効果スピン分極トランジスタの作製及び評価 |
| Authors: | 佐藤, 祐喜 |
| Authors(alternative): | さとう, ゆうき |
| Keywords: | Rashba機構, スピン軌道相互作用, 狭バンドギャップHEMT
Rashba mechanism, spin-orbit interaction,narrow-ga |
| Issue Date: | Mar-1999 |
| Description: |
Supervisor:山田 省二
材料科学研究科
修士 |
| Title(English): | Fabrication of spin-polarized field effect transistor innarrow-gap HEMT |
| Authors(English): | Sato, Yuki |
| URI: | https://hdl.handle.net/10119/2653 |
| Appears in Collections: | M-MS. 1998年度(H10) (Jun.1998 - Mar.1999)
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