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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/2653

Title: 狭バンドギャップHEMTを用いた電界効果スピン分極トランジスタの作製及び評価
Authors: 佐藤, 祐喜
Authors(alternative): さとう, ゆうき
Keywords: Rashba機構, スピン軌道相互作用, 狭バンドギャップHEMT
Rashba mechanism, spin-orbit interaction,narrow-ga
Issue Date: Mar-1999
Description: 
Supervisor:山田 省二
材料科学研究科
修士
Title(English): Fabrication of spin-polarized field effect transistor innarrow-gap HEMT
Authors(English): Sato, Yuki
URI: http://hdl.handle.net/10119/2653
Appears in Collections:M-MS. 平成10年度 (Jun.1998 - Mar.1999)

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