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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/2890

Title: 200℃以下でのGaAs層のMBE成長
Authors: 向, 浩一郎
Authors(alternative): むかい, こういちろう
Keywords: MBE, LT-GaAs, X線回折, 金属・絶縁体転位
MBE, LT-GaAs, X-ray diffraction, Metal-Insulator t
Issue Date: Mar-2002
Description: 
Supervisor:大塚 信雄
材料科学研究科
修士
Title(English): Molecular Beam Epitaxy Growth of GaAs Layers Grown at Substrate Temperatures below 200℃
Authors(English): Mukai, Koichiro
Language: jpn
URI: http://hdl.handle.net/10119/2890
Appears in Collections:M-MS. 2001年度(H13) (Jun.2001 - Mar.2002)

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