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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/2916

Title: GaAsへのGeドーピングとpn接合の研究
Authors: 八田谷, 洋一
Authors(alternative): やたがい, よういち
Keywords: エピタキシー, Ge, ドーピング, pn接合
MBE, Ge, doping, pn junction
Issue Date: Mar-2002
Supervisor:山田 省二
Title(English): The growth and estimation of Ge doped GaAs film by MBE
Authors(English): Yatagai, Youichi
Language: jpn
URI: http://hdl.handle.net/10119/2916
Appears in Collections:M-MS. 2001年度(H13) (Jun.2001 - Mar.2002)

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