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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/3352
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| タイトル: | Negative magnetoresistance of Be δ -doped GaAs structures |
| 著者: | Idutsu, Y
Noh, J.P
Shimogishi, F
Otsuka, N |
| 発行日: | 2006-03 |
| 出版者: | AMERICAN PHYSICAL SOCIETY |
| 誌名: | Physical Review B : Condensed Matter and Materials Physics |
| 巻: | 73 |
| 号: | 11 |
| 開始ページ: | 115306-1 |
| 終了ページ: | 115306-6 |
| DOI: | 10.1103/PhysRevB.73.115306 |
| 抄録: | Magnetotransport properties of Be δ-doped structures grown by molecular-beam epitaxy have been studied in the temperature range from 5 K to room temperature. In the structure, an ultrathin low-temperature-grown GaAs layer or Se δ-doped layer are placed in the vicinity of a Be δ-doped layer, which results in a strong localization of holes at deep levels of the Be δ-doped layer. With an applied magnetic field perpendicular to theδ-doped layer, positive magnetoresistance is observed at all measured temperatures. With an applied magnetic field parallel to theδ-doped layer, on the other hand, negative magnetoresistance occur from room temperature to nearly 100 K, below which magnetoresistance changes into positive values. The negative magnetoresistance with a parallel magnetic field results from localized spins in the Beδ-doped layer. Bumps of curves of magnetoresistance are observed with parallel magnetic fields in the temperature range from 50 to 100 K, which suggests the possibility of antiferromagnetic alignments of the spins inδ-doped layer. |
| Rights: | Y. Idutsu, J. P. Noh, F. Shimogishi, and N. Otsuka, Physical Review B, 73(11), 115306, 2006. Copyright 2006 by the American Physical Society. http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000073000011115306000001&idtype=cvips&gifs=Yes |
| URI: | http://hdl.handle.net/10119/3352 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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