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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3364

Title: Fabrication and characterization of C_<60> thin-film transistors with high field effect mobility
Authors: Kobayashi, S
Takenobu, T
Mori, S
Fujiwara, A
Iwasa, Y
Issue Date: 2003-06
Publisher: AMERICAN INSTITUTE OF PHYSICS
Magazine name: Applied Physics Letters
Volume: 82
Number: 25
Start page: 4581
End page: 4583
DOI: 10.1063/1.1577383
Abstract: We report an improvement in performance of C_<60> thin-film field-effect transistors (TFTs) fabricated by molecular-beam deposition. Devices, fabricated and characterized under a high vacuum without exposure to air, routinely showed current on/off ratios >10^8 and field-effect mobilities in the range of 0.5-0.3 cm^2/Vs. The mobility obtained is close to that derived from the photocurrent measurements on C_<60> thin films and comparable to a very high value among n-type organic TFTs.
Rights: Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara and Y. Iwasa , Applied Physics Letters 82(25), 4581-4583 (2003) and may be found at http://link.aip.org/link/?apl/82/4581.
URI: http://hdl.handle.net/10119/3364
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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