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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3370

Title: Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes
Authors: Ohta, T
Nagano, T
Ochi, K
Kubozono, Y
Shikoh, E
Fujiwara, A
Issue Date: 2006-07
Publisher: AMERICAN INSTITUTE OF PHYSICS
Magazine name: Applied Physics Letters
Volume: 89
Number: 5
Start page: 053508-1
End page: 053508-3
DOI: 10.1063/1.2266596
Abstract: Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work functionφfrom 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobilityμ_p and the on-off ratio in the perylene FET increase with an increase inφof the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting smallφ. These results can be reasonably explained on the basis of energy barrier for hole or electron.
Rights: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Toshio Ohta, Takayuki Nagano, Kenji Ochi, Yoshihiro Kubozono, Eiji Shikoh and Akihiko Fujiwara, Applied Physics Letters 89(5), 053508 (2006) and may be found at http://link.aip.org/link/?apl/89/053508.
URI: http://hdl.handle.net/10119/3370
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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