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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3375

Title: Fabrication of field-effect transistor devices with fullerodendron by solution process
Authors: Kusai, H
Nagano, T
Imai, K
Kubozono, Y
Sako, Y
Takaguchi, Y
Fujiwara, A
Akima, N
Iwasa, Y
Hino, S
Issue Date: 2006-04
Magazine name: Applied Physics Letters
Volume: 88
Number: 17
Start page: 173509-1
End page: 173509-3
DOI: 10.1063/1.2198098
Abstract: n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO_2 / Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μof the fullerodendron FET reaches 1.7×10^<-3> cm^2 V^<-1> s^<-1> at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.
Rights: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Haruka Kusai, Takayuki Nagano, Kumiko Imai, Yoshihiro Kubozono, Yuuki Sako, Yutaka Takaguchi, Akihiko Fujiwara, Nima Akima, Yoshihiro Iwasa and Shojun Hino, Applied Physics Letters 88(17), 173509 (2006) and may be found at http://link.aip.org/link/?apl/88/173509.
URI: http://hdl.handle.net/10119/3375
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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