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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3377

Title: Alignment of Grain Boundary in a Si film Crystallized by a Linearly Polarized Laser Beam on a Glass Substrate
Authors: Horita, S
Nakata, Y
Shimoyama, A
Issue Date: 2001-04
Magazine name: Applied Physics Letters
Volume: 78
Number: 15
Start page: 2250
End page: 2252
DOI: 10.1063/1.1362336
Abstract: We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam. Meanwhile, in the Si film crystallized by circularly polarized beam that passed through the λ/4 plate, the grain boundaries were randomly generated. This means that linear polarization of the laser beam is essential to align grain boundaries periodically or to produce a periodic temperature distribution in the irradiated Si film.
Rights: Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Susumu Horita, Y. Nakata, and A. Shimoyama, Applied Physics Letters 78(15), 2250-2252 (2001) and may be found at http://link.aip.org/link/?apl/78/2250.
URI: http://hdl.handle.net/10119/3377
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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