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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/3379
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| タイトル: | Numerical analysis for lateral grain growth of poly-Si thin films controlled by laser-induced periodic thermal distribution |
| 著者: | Kaki, H
Nakata, Y
Horita, S |
| 発行日: | 2002 |
| 出版者: | Warrendale, Pa.; Materials Research Society |
| 誌名: | Materials Research Society Symposium Proceedings |
| 巻: | 715 |
| 開始ページ: | 211 |
| 終了ページ: | 216 |
| 抄録: | In order to obtain a large Si grain and to control the location of grain boundary in a Si film thermally melting-crystallized by pulse laser, we have proposed to use a periodic thermal distribution spontaneously induced by a linearly polarized laser beam. The lateral grain growth of polycrystalline Si thin films, which is controlled by the laser-induced periodic thermal distribution, was analyzed numerically by two-dimensional finite element computer simulations. From this analysis, it can be conclude that the laser irradiation should be performed to melt not all but most of Si film or melt it partially, making the large difference between the maximal and minimal temperature in the thermal distribution. It was also found that the temperature difference was increased with the optical absorption in the Si film and the fluence. |
| Rights: | Copyright 2002 by the Materials Research Society. Materials Research Society, Hirokazu Kaki, Yasunori Nakata, Susumu Horita, MRS Symposium Proceedings(Amorphous and Heterogeneous Silicon-Based Films--2002), 715, 2002, 211-216.
http://www.mrs.org/s_mrs/index.asp |
| URI: | http://hdl.handle.net/10119/3379 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| S-230.pdf | | 203Kb | Adobe PDF | 見る/開く |
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