JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3379

Title: Numerical analysis for lateral grain growth of poly-Si thin films controlled by laser-induced periodic thermal distribution
Authors: Kaki, H
Nakata, Y
Horita, S
Issue Date: 2002
Publisher: Warrendale, Pa.; Materials Research Society
Magazine name: Materials Research Society Symposium Proceedings
Volume: 715
Start page: 211
End page: 216
Abstract: In order to obtain a large Si grain and to control the location of grain boundary in a Si film thermally melting-crystallized by pulse laser, we have proposed to use a periodic thermal distribution spontaneously induced by a linearly polarized laser beam. The lateral grain growth of polycrystalline Si thin films, which is controlled by the laser-induced periodic thermal distribution, was analyzed numerically by two-dimensional finite element computer simulations. From this analysis, it can be conclude that the laser irradiation should be performed to melt not all but most of Si film or melt it partially, making the large difference between the maximal and minimal temperature in the thermal distribution. It was also found that the temperature difference was increased with the optical absorption in the Si film and the fluence.
Rights: Copyright 2002 by the Materials Research Society. Materials Research Society, Hirokazu Kaki, Yasunori Nakata, Susumu Horita, MRS Symposium Proceedings(Amorphous and Heterogeneous Silicon-Based Films--2002), 715, 2002, 211-216. http://www.mrs.org/s_mrs/index.asp
URI: http://hdl.handle.net/10119/3379
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
S-230.pdf203KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology