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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3380

Title: Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator
Authors: Kaki, H
Ootani, T
Horita, S
Issue Date: 2004
Publisher: Warrendale, Pa.; Materials Research Society
Magazine name: Materials Research Society Symposium Proceedings
Volume: 808
Start page: 283
End page: 288
Abstract: In order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film.
Rights: Copyright 2004 by the Materials Research Society. Materials Research Society, Hirokazu Kaki, Takehiko Ootani, Susumu Horita, MRS Symposium Proceedings(Amorphous and Nanocrystalline Silicon Science and Technology—2004), 808, 2004, 283-288. http://www.mrs.org/s_mrs/index.asp
URI: http://hdl.handle.net/10119/3380
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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