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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/3380
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| タイトル: | Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator |
| 著者: | Kaki, H
Ootani, T
Horita, S |
| 発行日: | 2004 |
| 出版者: | Warrendale, Pa.; Materials Research Society |
| 誌名: | Materials Research Society Symposium Proceedings |
| 巻: | 808 |
| 開始ページ: | 283 |
| 終了ページ: | 288 |
| 抄録: | In order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film. |
| Rights: | Copyright 2004 by the Materials Research Society. Materials Research Society, Hirokazu Kaki, Takehiko Ootani, Susumu Horita, MRS Symposium Proceedings(Amorphous and Nanocrystalline Silicon Science and Technology—2004), 808, 2004, 283-288.
http://www.mrs.org/s_mrs/index.asp |
| URI: | http://hdl.handle.net/10119/3380 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| S-231.pdf | | 300Kb | Adobe PDF | 見る/開く |
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