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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/3386

Title: Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature
Authors: Sano, H
Suda, A
Hatanaka, T
Mizutani, G
Otsuka, N
Issue Date: 2000-10
Magazine name: Journal of Applied Physics
Volume: 88
Number: 7
Start page: 3948
End page: 3953
DOI: 10.1063/1.1290263
Abstract: Raman scattering, x-ray diffraction, and transmission electron microscopy (TEM) were used to study GaAs layers grown by molecular beam epitaxy at low substrate temperature (LT-GaAs). The intensity of forbidden Raman scattering of longitudinal optical and transverse optical phonons linearly increase as a function of the concentration of excess As in the range of [As_<Ga>]=0.04×10^<20>-1.175×10^<20>cm^<-3>. Concentrations of excess As in LT-GaAs layers were estimated from the lattice spacings measured with an x-ray diffractometer. No obvious defect was seen in cross-sectional TEM images of these nonstoichiometric As-rich GaAs layers. The origin of the forbidden Raman scattering of the nonstoichiometric LT-GaAs layer is explained as the strain induced by As_<Ga> (As antisite)-related defects with low structural symmetry.
Rights: Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. Sano, A. Suda, T. Hatanaka, G. Mizutani and N. Otsuka, Journal of Applied Physics 88(7), 3948-3953 (2000) and may be found at http://link.aip.org/link/?jap/88/3948.
URI: http://hdl.handle.net/10119/3386
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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