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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/3990
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| タイトル: | Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films |
| 著者: | Nguyen, Hoa Hong
Sakai, Joe
Poirot, Nathalie
Brizé, Virginie |
| 発行日: | 2006-04 |
| 出版者: | AMERICAN PHYSICAL SOCIETY |
| 誌名: | Physical Review B |
| 巻: | 73 |
| 号: | 13 |
| 開始ページ: | 1324041-1 |
| 終了ページ: | 132404-4 |
| DOI: | 10.1103/PhysRevB.73.132404 |
| 抄録: | Remarkable room-temperature ferromagnetism was observed in undoped TiO_2, HfO_2, and In_2O_3 thin films. The magnetic moment is rather modest in the case of In_2O_3 films on MgO substrates (while on Al_2O_3 substrates, it is negative showing diamagnetism) when the magnetic field was applied parallel to the film plane. In contrast, it is very large in the other two cases (about 20 and 30 emu/cm^3 for 200-nm-thick TiO_2 and HfO_2 films, respectively). Since bulk TiO_2, HfO_2, and In_2O_3 are clearly diamagnetic, and moreover, there are no contaminations in any substrate, we must assume that the thin film form, which might create necessary defects or oxygen vacancies, would be the reason for undoped semiconducting or insulating oxides to become ferromagnetic at room temperature. |
| Rights: | Nguyen Hoa Hong, Joe Sakai, Nathalie Poirot, Virginie Brizé, Physical Review B, 73(13), 132404, 2006. "Copyright 2006 by the American Physical Society." http://link.aps.org/abstract/PRB/v73/e132404 |
| 資料タイプ: | Article |
| URI: | http://hdl.handle.net/10119/3990 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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