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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/3995
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| タイトル: | Co distribution in ferromagnetic rutile Co-doped TiO_2 thin films grown by laser ablation on silicon substrates |
| 著者: | Nguyen, Hoa Hong
Sakai, Joe
Prellier, W.
Hassini, Awatef |
| 発行日: | 2003-10 |
| 出版者: | AMERICAN INSTITUTE OF PHYSICS |
| 誌名: | Applied Physics Letters |
| 巻: | 83 |
| 号: | 15 |
| 開始ページ: | 3129 |
| 終了ページ: | 3131 |
| DOI: | 10.1063/1.1619227 |
| 抄録: | Pure rutile Co-doped TiO_2 films were fabricated by the pulsed-laser-deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the target, and films under various conditions all are ferromagnetic well above room temperature. Even though Rutherford backscattering spectroscopy measurements show that Co atoms mostly localize near the surface of the films and exist less in deeper levels, other experimental evidence shows that the ferromagnetism does not come from Co segregations, but from the Co-doped TiO_2 matrix. Rutile Ti_<1-x>Co_xO_2 thin films grown by a very simple technique on low-cost silicon substrates showing a Curie temperature (T_C) above 400 K appear to be very attractive to applications. |
| Rights: | Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Nguyen Hoa Hong, Joe Sakai W. Prellier, Awatef Hassini, Applied Physics Letters 83(15), 3129-3131 (2003) and may be found at http://link.aip.org/link/?apl/83/3129. |
| 資料タイプ: | Article |
| URI: | http://hdl.handle.net/10119/3995 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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