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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4003

Title: Room temperature ferromagnetism in laser ablated Ni-doped In_2O_3 thin films
Authors: Nguyen, Hoa Hong
Sakai, Joe
Ngo, Thu Huong
Brizé, Virginie
Issue Date: 2005-09
Magazine name: Applied Physics Letters
Volume: 87
Number: 10
Start page: 102505-1
End page: 102505-3
DOI: 10.1063/1.2041822
Abstract: Ni-doped In_2O_3 thin films were fabricated by laser ablation on sapphire and MgO substrates under various conditions. All Ni: In_2O_3 films are well-crystallized, single phase, and show clear evidences of room temperature ferromagnetism (FM). Ni atoms were well substituted for In atoms, and distributed very uniformly over the whole thickness of the films. However, the films grown at 550 °C have the Ni concentration exactly the same as in the synthesized target, and as the results, they have the best crystallinity and the largest magnetic moment (maximum about 0.7 μB/Ni). The observed FM in this type of wide-band gap semiconductors has proved that by applying appropriate growth conditions, doping few percent of Ni into In_2O_3 could indeed result in a potential magnetic material.
Rights: Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Nguyen Hoa Hong, Joe Sakai, Ngo Thu Huong, Virginie Brizé, Applied Physics Letters 87(10), 102505 (2005) and may be found at http://link.aip.org/link/?apl/87/102505.
Type: Article
URI: http://hdl.handle.net/10119/4003
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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