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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4005

Title: Room-temperature resistance switching and temperature hysteresis of Pr_<0.7>Ca_<0.3>MnO_3 junctions
Authors: Sakai, Joe
Imai, Syozo
Issue Date: 2005-05
Publisher: AMERICAN INSTITUTE OF PHYSICS
Magazine name: Journal of Applied Physics
Volume: 97
Number: 10 part.2&3
Start page: 10H709-1
End page: 10H709-3
DOI: 10.1063/1.1851852
Abstract: Current–voltage (I–V) characteristics of Ag/Pr_<0.7>Ca_<0.3>MnO_3(PCMO)/YBa_2Cu_3O_<7-δ>(YBCO) junctions fabricated on LaAlO_3 (001) substrates were measured. Nonlinear, asymmetric, and hysteretic I–V curves, that are considered to be the nature of the resistance memory effect previously reported, were observed. In some junctions the I–V characteristics were switched between linear and nonlinear by its thermal hysteresis. Room-temperature I–V characteristics, originally being linear, turned to be nonlinear after cooling to 100 K, and returned to be linear after heating to 400 K.
Rights: Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Joe Sakai, Syozo Imai, Journal of Applied Physics 97(10-2&3), 10H709 (2005) and may be found at http://link.aip.org/link/?jap/97/10H709.
Type: Article
URI: http://hdl.handle.net/10119/4005
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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