JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4007

Title: Evidence for carrier-induced high-T_c ferromagnetism in Mn-doped GaN film
Authors: Yoshii, S.
Sonoda, S.
Yamamoto, T.
Kashiwagi, T.
Hagiwara, M.
Yamamoto, Y.
Akasaka, Y.
Kindo, K.
Hori, H.
Issue Date: 2007-05
Publisher: Institute of Physics
Magazine name: Europhysics Letters (EPL)
Volume: 78
Number: 3
Start page: 37006-1
End page: 37006-4
DOI: 10.1209/0295-5075/78/37006
Abstract: A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high-T_C and the carrier transport in the Mn-doped GaN film.
Rights: IOP PUBLISHING, S. Yoshii, S. Sonoda, T. Yamamoto, T. Kashiwagi, M. Hagiwara, Y. Yamamoto, Y. Akasaka, K. Kindo, H. Hori, Europhysics Letters, 78(3), 37006, 2007. http://www.iop.org/EJ/abstract/0295-5075/78/3/37006
Type: Article
URI: http://hdl.handle.net/10119/4007
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
118-48.pdf185KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology