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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4009

Title: Influence of the beam irradiation condition with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser
Authors: Nakata, Yasunori
Kaki, Hirokazu
Horita, Susumu
Issue Date: 2002
Publisher: Warrendale, Pa.; Materials Research Society
Magazine name: Materials Research Society Symposium - Proceedings
Volume: 715
Start page: 199
End page: 204
Abstract: We investigated influence of the beam irradiation conditions with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser in order to enlarge the periodic width of grain boundary. The irradiation conditions are fluence, pulse number and film thickness. We can obtain the periodic width of about 900 nm by increasing the incident angle to 25°. The experimental results suggest that the pulse number and the film thickness should be controlled properly as well as fluence in order to produce large grain stably for the oblique incidence. The detail of these conditions was discussed.
Rights: Copyright 2002 by the Materials Research Society. Materials Research Society, Yasunori Nakata, Hirokazu Kaki and Susumu Horita, MRS Symposium Proceedings(Amorphous and Heterogeneous Silicon-Based Films--2002), 715, 2002, 199-204. http://www.mrs.org/s_mrs/index.asp
Type: Article
URI: http://hdl.handle.net/10119/4009
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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