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| Title: | Unusually large absolute Raman scattering cross section of hydrogen vibrations on Si(111) |
| Authors: | Sano, H.
Ushioda, S. |
| Issue Date: | 1996-01-15 |
| Publisher: | American Physical Society |
| Magazine name: | Physical Review B |
| Volume: | 53 |
| Number: | 4 |
| Start page: | 1958 |
| End page: | 1962 |
| DOI: | 10.1103/PhysRevB.53.1958 |
| Abstract: | We have measured the absolute Raman scattering cross section of the terrace vibration mode of silicone-monohydride on a Si(111) surface that was prepared by chemical etching in a NH_<4>F solution. The measured cross section at the incident wavelength of 4880 A is (dσ_<zz> / dΩ)=(8.37±0.32)×10^<-28> cm2/(sr line Si-H bond). It is about 74 times the cross section of the symmetric stretching mode of the gaseous SiH_4 molecule. The measured excitation profile of the cross section in the range of λ_<in>=4579-5145 A has a ω^4 dependence indicating that there is no resonant enhancement of the cross section. We estimate that the Raman transition dipole matrix elements are about three times larger for the Si(111)/H monolayer system than for the free SiH_4 molecule. |
| Rights: | H. Sano and S. Ushioda, Physical Review B, 53(4), 1996, 1958-1962. Copyright 1996 by the American Physical Society. http://link.aps.org/abstract/PRB/v53/p1958 |
| URI: | http://hdl.handle.net/10119/4406 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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