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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4406

Title: Unusually large absolute Raman scattering cross section of hydrogen vibrations on Si(111)
Authors: Sano, H.
Ushioda, S.
Issue Date: 1996-01-15
Publisher: American Physical Society
Magazine name: Physical Review B
Volume: 53
Number: 4
Start page: 1958
End page: 1962
DOI: 10.1103/PhysRevB.53.1958
Abstract: We have measured the absolute Raman scattering cross section of the terrace vibration mode of silicone-monohydride on a Si(111) surface that was prepared by chemical etching in a NH_<4>F solution. The measured cross section at the incident wavelength of 4880 A is (dσ_<zz> / dΩ)=(8.37±0.32)×10^<-28> cm2/(sr line Si-H bond). It is about 74 times the cross section of the symmetric stretching mode of the gaseous SiH_4 molecule. The measured excitation profile of the cross section in the range of λ_<in>=4579-5145 A has a ω^4 dependence indicating that there is no resonant enhancement of the cross section. We estimate that the Raman transition dipole matrix elements are about three times larger for the Si(111)/H monolayer system than for the free SiH_4 molecule.
Rights: H. Sano and S. Ushioda, Physical Review B, 53(4), 1996, 1958-1962. Copyright 1996 by the American Physical Society. http://link.aps.org/abstract/PRB/v53/p1958
URI: http://hdl.handle.net/10119/4406
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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