JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/4406
|
Title: | Unusually large absolute Raman scattering cross section of hydrogen vibrations on Si(111) |
Authors: | Sano, H. Ushioda, S. |
Issue Date: | 1996-01-15 |
Publisher: | American Physical Society |
Magazine name: | Physical Review B |
Volume: | 53 |
Number: | 4 |
Start page: | 1958 |
End page: | 1962 |
DOI: | 10.1103/PhysRevB.53.1958 |
Abstract: | We have measured the absolute Raman scattering cross section of the terrace vibration mode of silicone-monohydride on a Si(111) surface that was prepared by chemical etching in a NH_<4>F solution. The measured cross section at the incident wavelength of 4880 A is (dσ_<zz> / dΩ)=(8.37±0.32)×10^<-28> cm2/(sr line Si-H bond). It is about 74 times the cross section of the symmetric stretching mode of the gaseous SiH_4 molecule. The measured excitation profile of the cross section in the range of λ_<in>=4579-5145 A has a ω^4 dependence indicating that there is no resonant enhancement of the cross section. We estimate that the Raman transition dipole matrix elements are about three times larger for the Si(111)/H monolayer system than for the free SiH_4 molecule. |
Rights: | H. Sano and S. Ushioda, Physical Review B, 53(4), 1996, 1958-1962. Copyright 1996 by the American Physical Society. http://link.aps.org/abstract/PRB/v53/p1958 |
URI: | http://hdl.handle.net/10119/4406 |
Material Type: | publisher |
Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
|
Files in This Item:
File |
Description |
Size | Format |
120-14.pdf | | 95Kb | Adobe PDF | View/Open |
|
All items in DSpace are protected by copyright, with all rights reserved.
|