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http://hdl.handle.net/10119/4407
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| Title: | Raman Scattering from Trimethylaluminum (TMA) :Free and Adsorbed Molecules on GaAs(100) |
| Authors: | Sano, H.
Sakai, J.
Mizutani, G.
Ushioda, S. |
| Issue Date: | 1993 |
| Publisher: | Elsevier |
| Magazine name: | Journal of Electron Spectroscopy and Related Phenomena |
| Volume: | 64-65 |
| Start page: | 865 |
| End page: | 870 |
| DOI: | 10.1016/0368-2048(93)80161-E |
| Abstract: | We have measured the Raman scattering from an adsorbed layer of trimethylaluminum (TMA) on GaAs(100) as a function of coverage down to 17 monolayers. The absolute scattering cross-section of the CH_3-symmetric stretching mode of TMA was found to be 8.0 × 10^<-29> cm2/dimer sr line. The corresponding cross-section in the gaseous state is 2.6 × 10^<-29> cm2/dimer sr line. The observed enhancement of the cross-section in the multilayer is due to the effect of the molecular field. The scattering cross-section of the CH_3-symmetric stretching mode of gaseous trimethylgallium (TMG) is 1.3 × 10^<-29> cm2/molecule sr line. Based on these data on the absolute Raman cross-sections, we expect that the monolayer of these molecules on GaAs would be extremely difficult to observe by Raman scattering in a crystal growing environment. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. H. Sano, J. Sakai, G. Mizutani, and S. Ushioda, Journal of Electron Spectroscopy and Related Phenomena, 64-65, 1993, 865-870, http://dx.doi.org/10.1016/0368-2048(93)80161-E |
| URI: | http://hdl.handle.net/10119/4407 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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