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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4410
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| タイトル: | Transport properties in C_<60> field-effect transistor with a single Schottky barrier |
| 著者: | Ohta, Yohei
Kubozono, Yoshihiro
Fujiwara, Akihiko |
| 発行日: | 2008-05-02 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 92 |
| 号: | 17 |
| 開始ページ: | 173306-1 |
| 終了ページ: | 173306-3 |
| DOI: | 10.1063/1.2919799 |
| 抄録: | C_<60> field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier. |
| Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yohei Ohta, Yoshihiro Kubozono, and Akihiko Fujiwara, Applied Physics Letters, 92(17), 173306 (2008) and may be found at http://link.aip.org/link/?APPLAB/92/173306/1 |
| URI: | http://hdl.handle.net/10119/4410 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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