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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4510

Title: A Si nanopillar grown on a Si tip by atomic force microscopy in ultrahigh vacuum for a high-quality scanning probe
Authors: Arai, Toyoko
Tomitori, Masahiko
Issue Date: 2005-02-08
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 86
Number: 7
Start page: 073110-1
End page: 073110-3
DOI: 10.1063/1.1866213
Abstract: We grow a Si nanopillar on a commercial Si tip on an atomic force microscopy (AFM) cantilever using AFM in ultrahigh vacuum for a high-quality scanning force probe, and observe noncontact-AFM (nc-AFM) images of Si(111)7×7 and Ge deposited Si(111) with the nanopillar. We observe it ex situ by transmission electron microscopy to confirm its growth and crystallinity. The nc-AFM image clearly showed the high performance of the nanopillar as a probe with respect to the spatial resolution, image stability, and reproducibility. This nanopillar growth technique can elongate the lifetime of the cantilever and be applied to other materials.
Rights: Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in T. Arai and M. Tomitori, Applied Physics Letters, 86(7), 073110 (2005) and may be found at http://link.aip.org/link/?APPLAB/86/073110/1
URI: http://hdl.handle.net/10119/4510
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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